E-Beam Lithography System for Next-Level Nanofabrication- Few Insights!

Precision and flexibility are the cornerstones of modern nanofabrication. For manufacturers and research labs, the pressure to produce smaller, more complex, and reliable devices is relentless. As the demand for next-generation semiconductors and quantum devices grows, many are asking: Is your current patterning technology up to the task?


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Hydrogen Silsesquioxane Ebl Negative
Achieve unmatched pattern precision with hydrogen silsesquioxane ebl Negative from DisChem. This negative tone resist is engineered for direct-write thin film applications, offering excellent pitch resolution and sensitivity. Its adaptability allows for use in a wide range of microfabrication processes, from semiconductor manufacturing to nanotechnology research. With hydrogen silsesquioxane ebl Negative, you can expect reliable, high-resolution results that support your innovation goals.
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Hydrogen Silesquioxane

Our hydrogen silesquioxane is a high-performance material designed for electron beam lithography applications. Known for its superior resolution and etch resistance, this resist enables the fabrication of intricate micro- and nanostructures with exceptional accuracy. DisChem’s hydrogen silesquioxane is available in various concentrations, making it adaptable for different film thicknesses and application requirements. Count on us to deliver the quality and consistency you need for your most demanding projects.

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